Silicon Carbide
Silicon Carbide
Polycrystalline silicon carbide (SiC) can outperform oxide ceramics in some key areas, including high temperature applications, wear parts, or electronic and optoelectronic components.
The principal properties of silicon carbide include:
- Lightness
- Extreme hardness
- Good fatigue resistance
- High thermal conductivity
- Low coefficient of thermal expansion
- High chemical inertia
|
|
Unit |
Value |
General |
|
|
|
|
Density |
g.cm-3 |
3.1 |
|
Water Adsorption |
% |
0 |
|
Gaz permeability |
% |
0 |
|
Color |
- |
Black |
|
Structure |
- |
Polycristal |
|
Average grain size |
µm |
- |
|
|
|
|
Mechanical |
|
|
|
|
Bending strength 20°C |
MPa |
400 |
|
Weibull Modulus |
- |
12 |
|
Compression strenght |
MPa |
2000 |
|
K1c |
MPa.m1/2 |
4 |
|
Young Modulus |
GPa |
400 |
|
Poisson ratio |
- |
0.15 |
|
Hardness Vickers |
Hv |
2200 |
|
|
|
|
Thermal |
|
|
|
|
Conductivity 20°C |
W.m-1.k-1 |
100 |
|
Conductivity 1000°C |
W.m-1.k-1 |
|
|
Linear thermal expansion coeff. |
|
|
|
20-100°C |
10-6.k-1 |
|
|
20-400°C |
10-6.k-1 |
3.5 |
|
20-600°C |
10-6.k-1 |
|
|
20-1000°C |
10-6.k-1 |
5 |
|
Specific heat 20°C |
kJ.kg-1.k-1 |
0.6 |
|
Temperature max |
|
|
|
Oxygen |
°C |
1400 |
|
Inert |
°C |
1800 |
|
|
|
|
Electrical |
|
|
|
|
Resistivity 25°C |
Ω.cm |
5.107 |
|
Resistivity 400°C |
Ω.cm |
1.101 |
|
Dielectric strength |
kV.mm-1 |
0 |
|
Permittivity |
- |
|
|
Tan δ |
- |
4.10-3 (1GHz) |
Silicon Nitride
Silicon Nitride
Polycrystalline silicon nitride (Si3N4) can outperform oxide ceramics in some key areas, including high temperature applications, wear parts, or electronic and optoelectronic components.
The principal properties of silicon carbide include:
- Lightness
- Good fatigue resistance
- Medium thermal conductivity
- Low coefficient of thermal expansion
- High chemical inertia
|
|
Units |
Values |
|
|
|
|
General |
|
|
|
|
Density |
g.cm-3 |
3.21 |
|
Water Absorption |
% |
0 |
|
Gaz permeability |
% |
0 |
|
Color |
- |
Grey |
|
Structure |
- |
Polycristal |
|
Average grain size |
µm |
- |
|
|
|
|
Mecanical |
|
|
|
|
Bending strenght 20°C |
MPa |
850 |
|
Weibull modulus |
|
16
|
|
Compression strength |
MPa |
3000 |
|
K1c |
MPa.m1/2 |
7 |
|
Young modulus |
GPa |
300 |
|
Poisson ratio |
- |
0.25 |
|
Hardness Vickers |
Hv |
1600 |
|
|
|
|
Thermal |
|
|
|
|
Conductivity 20°C |
W.m-1.k-1 |
20 |
|
Conductivity 1000°C |
W.m-1.k-1 |
|
|
Linear thermal expansion coeff. |
|
|
|
20-100°C |
10-6.k-1 |
|
|
20-400°C |
10-6.k-1 |
3.2 |
|
20-600°C |
10-6.k-1 |
|
|
20-1000°C |
10-6.k-1 |
4.3 |
|
Specific heat 20°C |
kJ.kg-1.k-1 |
0.7 |
|
Temperature max |
|
|
|
Oxygen |
°C |
1300 |
|
Inert |
°C |
1600 |
|
|
|
|
Electrical |
|
|
|
|
Resistivity 25°C |
Ω.cm |
1.1014 |
|
Resistivity 400°C |
Ω.cm |
1.1010
|
|
Dielectric strenght |
kV.mm-1 |
19 |
|
Permittivity |
- |
8 (1MHz) |
|
Tan δ |
- |
|